“SAMSUNG Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, today announced development of an array of next generation memory technologies designed to meet the requirements of the fast changing digital environment….SAMSUNG announced the world’s first 70nanometer (nm) 4Gigabit (Gb) NAND Flash memory and an 80nm DRAM device. In addition, the company announced a single chip memory solution, called fusion memory, which takes the multi-chip package and system-in-package concepts one step further to deliver a single design combining memory and logic….SAMSUNG’s world first 4Gb NAND flash is the fourth generation of NAND flash memory, following a growth curve that doubles its density every twelve months: 256Mb in 1999, 512Mb in 2000, 1Gb in 2001, 2Gb in 2002, and 4Gb in 2003….At the new higher density levels, nonvolatile memory is now a viable choice for solid-state data storage, replacing magnetic tapes and low-density hard disk drives. NAND flash will also target mobile applications, such as notebook PCs, tablet PCs, mobile handsets, MP3 players and PDAs, that have space, weight and power constraints.”